jiangsu changjiang electronics technology co., ltd sot-223 plastic-encapsulate transistors CZT122 transistor (npn) features z complementary to czt127 z silicon power darlington transistors z low speed switching and amplifier applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 5 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -65 ~ 150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min t yp m ax unit collector-base breakdown voltage v (br)cbo i c =1m a,i e =0 100 v collector-emitter breakdown voltage v (br)ceo i c =30ma,i b =0 100 v collector cut-off current i cbo v cb =100v,i e =0 200 ua base cut-off current i ceo v ce =50v,i b =0 500 ua emitter cut-off current i ebo v eb =5v,i c =0 2 ma h fe(1) v ce =3v,i c =0.5a 1000 dc current gain h fe(2) v ce =3v,i c =3a 1000 v ce(sat)1 i c =3a,i b =12ma 2 v collector-emitter saturation voltage v ce(sat)2 i c =5a,i b =20ma 4 v base-emitter voltage v be(on) v ce =3v,i c =3a 2.5 v transition frequency f t v ce =4v,i c =3a,f=1mhz 4 mhz collector output capacitance cob v cb =10v, i e =0, f=1.0mhz 200 pf sot-223 1. base 2. collector 3. emitter a,jun,2011
|
